BU406_14 Datasheet, PDF (2/3 Pages) ON Semiconductor – NPN Power Transistors

BU406, BU407
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Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I_C = 100 mAdc, I_B = 0)
BU406 V_CEO(sus)
200
−
−
Vdc
BU407
150
−
−
Collector Cutoff Current
(V_CE = Rated V_CEV, V_BE = 0)
(V_CE = Rated V_CEO + 50 Vdc, V_BE = 0)
(V_CE = Rated V_CEO + 50 Vdc, V_BE = 0, T_C = 150_C)
I_CES
mAdc
−
−
5
−
−
0.1
−
−
1
Emitter Cutoff Current
(V_EB = 6 Vdc, I_C = 0)
BU406, BU407
I_EBO
−
−
1
mAdc
ON CHARACTERISTICS (Note 1)
Collector−Emitter Saturation Voltage
(I_C = 5 Adc, I_B = 0.5 Adc)
V_CE(sat)
−
−
1
Vdc
Base−Emitter Saturation Voltage
(I_C = 5 Adc, I_B = 0.5 Adc)
V_BE(sat)
−
−
1.2
Vdc
Forward Diode Voltage
(I_EC = 5 Adc) “D” only
V_EC
−
−
2
Volts
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I_C = 0.5 Adc, V_CE = 10 Vdc, f_test = 20 MHz)
f_T
10
−
−
MHz
Output Capacitance
(V_CB = 10 Vdc, I_E = 0, f = 1 MHz)
C_ob
−
80
−
pF
SWITCHING CHARACTERISTICS
Inductive Load Crossover Time
(V_CC = 40 Vdc, I_C = 5 Adc, I_B1 = I_B2 = 0.5 Adc, L = 150 mH)
t_c
−
−
0.75
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 1%.
100
70 ^{TJ = 100°C}
50
25°C
30
V_CE = 5 V
20
10
0.1
0.2 0.3 0.5 0.7 1
2 3 5 7 10
I_C, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
10
dc
1
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.1
T_C = 25°C
BU407
BU406
2 3 5 7 10
20 30 50 70 100 200
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward
Bias Safe Operating Area
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2