BU406_14 Datasheet, PDF (1/3 Pages) ON Semiconductor – NPN Power Transistors

BU406, BU407
NPN Power Transistors
These devices are high voltage, high speed transistors for horizontal
deflection output stages of TV’s and CRT’s.
Features
• High Voltage
• Fast Switching Speed
• Low Saturation Voltage
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol
BU406 V_CEO
BU407
Value
200
150
Unit
Vdc
Collector−Emitter Voltage
BU406 V_CEV
400
Vdc
BU407
330
Collector−Base Voltage
BU406 V_CBO
400
Vdc
BU407
330
Emitter−Base Voltage
Collector Current − Continuous
− Peak Repetitive
V_EBO
6
Vdc
I_C
7
Adc
10
Collector Current − Peak (10 ms)
Base Current
Total Device Dissipation @ T_C = 25_C
Derate above 25°C
I_CM
15
Adc
I_B
4
Adc
P_D
60
W
0.48
W/_C
Operating and Storage Junction
Temperature Storage
T_J, T_stg −65 to 150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes1/8″ from Case for 5 Seconds
Symbol
R_qJC
R_qJA
T_L
Max
2.08
70
260
Unit
_C/W
_C/W
_C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 11
www.onsemi.com
NPN SILICON
POWER TRANSISTORS
7 AMPERES − 60 WATTS
150 AND 200 VOLTS
SCHEMATIC
COLLECTOR
2,4
1
BASE
3
EMITTER
MARKING
DIAGRAM
4
1
2
3
TO−220
CASE 221A
STYLE 1
BU40xG
AY WW
1
BU40x
A
Y
WW
G
= Specific Device Code
x = 6 or 7
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BU406G
TO−220AB
(Pb−Free)
50 Units / Rail
BU407G
TO−220AB
(Pb−Free)
50 Units / Rail
Publication Order Number:
BU406/D