 English |
|
|
|
|
|
|
|
| BSP19AT1G Datasheet, PDF (2/4 Pages) ON Semiconductor – NPN Silicon Expitaxial Transistor | |||
| |||
| ◁ |
BSP19AT1G
ELECTRICAL CHARACTERISTICS (TA = 25ï°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector-Base Cutoff Current
(VCB = 400 Vdc, IE = 0)
Emitter-Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 20 mAdc, VCE = 10 Vdc)
Current-Gain â Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz)
Collector-Emitter Saturation Voltage
(IC = 50 mAdc, IB = 4.0 mAdc)
Base-Emitter Saturation Voltage
(IC = 50 mAdc, IB = 4.0 mAdc)
2. Pulse Test: Pulse Width ï£ 300 ms, Duty Cycle = 2.0%
Symbol
Min
Max
Unit
V(BR)CEO
Vdc
350
--
ICBO
nAdc
--
20
IEBO
mAdc
--
10
hFE
--
40
--
fT
MHz
70
--
VCE(sat)
Vdc
--
0.5
VBE(sat)
Vdc
--
1.3
http://onsemi.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese