BFL4036 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

BFL4036
Electrical Characteristics at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID=10mA, VGS=0V
VDS=400V, VGS=0V
VGS=±24V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=7A
ID=7A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=14A
IS=14A, VGS=0V
See Fig.3
IS=14A, VGS=0V, di/dt=100A/μs
Ratings
Unit
min
typ
max
500
V
100
μA
±10
μA
3
5
V
3.5
7
S
0.4
0.52
Ω
1000
pF
200
pF
44
pF
22
ns
66
ns
117
ns
46
ns
38.4
nC
6.7
nC
22.1
nC
0.95
1.3
V
520
ns
4200
nC
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
VIN
VDD=200V
D
L
10V
≥50Ω
0V
RG
BFL4036
ID=7A
VIN
RL=28.2Ω
G
D
VOUT
PW=10μs
10V
0V
50Ω
S
VDD
D.C.≤1%
G
BFL4036
P.G
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
BFL4036 D
G
500μH
S
VDD=50V
Driver MOSFET
No. A1830-2/6