BFL4036 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1830A
BFL4036
N-Channel Power MOSFET
500V, 14A, 0.52Ω, TO-220F-3FS
http://onsemi.com
Features
• _{ON-resistance RDS(on)=0.4Ω (typ.)}
• _{10V drive}
• _{Input capacitance Ciss=1000pF (typ.)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain to Source Voltage
VDSS
500
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
IDc*1
IDpack*2
Limited only by maximum temperature Tch=150°C
Tc=25°C (Our ideal heat dissipation condition)*3
14
A
9.6
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
50
A
Allowable Power Dissipation
PD
Tc=25°C (Our ideal heat dissipation condition)*3
2.0
W
37
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
109 mJ
Avalanche Current *5
IAV
14
A
Note :*1 Shows chip capability
*2 Package limited
*3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=1mH, IAV=14A (Fig.1)
*5 L≤1mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54 ^BFL4036-1E
Ordering & Package Information
Device
Package
Shipping
BFL4036-1E
TO-220F-3FS
SC-67
50
pcs./tube
memo
Pb-Free
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54
2.54
2.76
0.5
1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
Semiconductor Components Industries, LLC, 2013
June, 2013
FL4036
LOT No.
1
3
61213 TKIM TC-00002924/90810QB TK IM TC-00002470 No. A1830-1/6