BDX53B_14 Datasheet, PDF (2/7 Pages) ON Semiconductor – Plastic Medium-Power Complementary Silicon Transistors

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
T_A T_C
4.0 80
3.0 60
2.0 40
1.0 20
T_C
T_A
0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I_C = 100 mAdc, I_B = 0)
V_CEO(sus)
Vdc
BDX53B, BDX54B
80
−
BDX53C, BDX54C
100
−
Collector Cutoff Current
(V_CE = 40 Vdc, I_B = 0)
(V_CE = 50 Vdc, I_B = 0)
Collector Cutoff Current
(V_CB = 80 Vdc, I_E = 0)
(V_CB = 100 Vdc, I_E = 0)
BDX53B, BDX54B
BDX53C, BDX54C
BDX53B, BDX54B
BDX53C, BDX54C
I_CEO
I_CBO
mAdc
−
0.5
−
0.5
mAdc
−
0.2
−
0.2
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I_C = 3.0 Adc, V_CE = 3.0 Vdc)
Collector−Emitter Saturation Voltage
(I_C = 3.0 Adc, I_B = 12 mAdc)
h_FE
750
−
−
V_CE(sat)
−
2.0
Vdc
−
4.0
Base−Emitter Saturation Voltage
(I_C = 3.0 Adc, I_C = 12 mA)
V_BE(sat)
−
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(I_C = 3.0 Adc, V_CE = 4.0 Vdc, f = 1.0 MHz)
h_fe
4.0
−
−
Output Capacitance
(V_CB = 10 Vdc, I_E = 0, f = 0.1 MHz)
C_ob
BDX53B, 53C
BDX54B, 54C
pF
−
300
−
200
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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