BDX53B_14 Datasheet, PDF (1/7 Pages) ON Semiconductor – Plastic Medium-Power Complementary Silicon Transistors

BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
• High DC Current Gain −
h_FE = 2500 (Typ) @ I_C = 4.0 Adc
• Collector Emitter Sustaining Voltage − @ 100 mAdc
V_CEO(sus) = 80 Vdc (Min) − BDX53B, 54B
V_CEO(sus) = 100 Vdc (Min) − BDX53C, 54C
• Low Collector−Emitter Saturation Voltage −
V_CE(sat) = 2.0 Vdc (Max) @ I_C = 3.0 Adc
V_CE(sat) = 4.0 Vdc (Max) @ I_C = 5.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• These Devices are Pb−Free and are RoHS Compliant*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Voltage}
V_CEO
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{BDX53B, BDX54B}
80
BDX53C, BDX54C
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Base Voltage}
V_CB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{BDX53B, BDX54B}
BDX53C, BDX54C
Vdc
80
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current − Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{− Peak}
V_EB
5.0
Vdc
I_C
8.0
Adc
12
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
I_B
0.2
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TC = 25°C
P_D
65
W
Derate above 25°C
0.48
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
T_J, T_stg −65 to +150 °C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Stresses exceeding those listed in the Maximum Ratings table may damage the}
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Ambient}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Case}
R_qJA
R_qJC
70
°C/W
1.92
°C/W
www.onsemi.com
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
4
1
2
3
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Collector
BDX5xyG
AY WW
1
3
Base 2 Emitter
Collector
BDX5xy =
A
=
Y
=
WW =
G
=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 15
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
BDX53B/D