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BDX53B_06 Datasheet, PDF (2/7 Pages) ON Semiconductor – Plastic Medium-Power Complementary Silicon Transistors | |||
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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
TA TC
4.0 80
3.0 60
2.0 40
1.0 20
TC
TA
0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
Min
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ OFF CHARACTERISTICS
CollectorâEmitter Sustaining Voltage (Note 1)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 100 mAdc, IB = 0)
VCEO(sus)
BDX53B, BDX54B
80
BDX53C, BDX54C
100
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (VCE = 50 Vdc, IB = 0)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Cutoff Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ON CHARACTERISTICS (Note 1)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ DC Current Gain
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 3.0 Adc, VCE = 3.0 Vdc)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
ICEO
BDX53B, BDX54B
â
BDX53C, BDX54C
â
ICBO
BDX53B, BDX54B
â
BDX53C, BDX54C
â
hFE
750
VCE(sat)
â
â
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ BaseâEmitter Saturation Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 3.0 Adc, IC = 12 mA)
VBE(sat)
â
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ DYNAMIC CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ SmallâSignal Current Gain
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
hfe
4.0
Cob
BDX53B, 53C
â
BDX54B, 54C
â
Max
Unit
Vdc
â
â
mAdc
0.5
0.5
mAdc
0.2
0.2
â
â
2.0
Vdc
4.0
2.5
Vdc
â
â
pF
300
200
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