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BDX53B_06 Datasheet, PDF (1/7 Pages) ON Semiconductor – Plastic Medium-Power Complementary Silicon Transistors | |||
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BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
Plastic MediumâPower
Complementary Silicon
Transistors
These devices are designed for generalâpurpose amplifier and
lowâspeed switching applications.
Features
⢠High DC Current Gain â
hFE = 2500 (Typ) @ IC = 4.0 Adc
⢠Collector Emitter Sustaining Voltage â @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) â BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) â BDX53C, 54C
⢠Low CollectorâEmitter Saturation Voltage â
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
⢠Monolithic Construction with BuiltâIn BaseâEmitter Shunt Resistors
⢠PbâFree Packages are Available*
MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
Symbol Value
Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
VCEO
Vdc
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ BDX53B, BDX54B
80
BDX53C, BDX54C
100
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
VCB
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ BDX53B, BDX54B
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ BDX53C, BDX54C
Vdc
80
100
EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ â Peak
VEB
5.0
Vdc
IC
8.0
Adc
12
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà Total Device Dissipation @ TC = 25°C
Derate above 25°C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Temperature Range
IB
PD
TJ, Tstg
0.2
65
0.48
â65 to +150
Adc
W
W/°C
°C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
Max
Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, JunctionâtoâAmbient RqJA
70
°C/W
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, JunctionâtoâCase
RqJC
1.92
°C/W
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80â100 VOLTS, 65 WATTS
4
1
2
3
TOâ220AB
CASE 221A
STYLE 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Collector
BDX5xyG
AY WW
1
3
Base 2 Emitter
Collector
BDX5xy
A
Y
WW
G
= Device Code
x = 3 or 4
y = B or C
= Assembly Location
= Year
= Work Week
= PbâFree Package
*For additional information on our PbâFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 â Rev. 12
Publication Order Number:
BDX53B/D
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