BDC01D Datasheet, PDF (2/4 Pages) Motorola, Inc – One Watt Amplifier Transistor

BDC01D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 2.0 V)
Collector – Emitter Saturation Voltage(1)
(IC = 1000 mA, IB = 100 mA)
Collector – Emitter On Voltage(1)
(IC = 1000 mA, VCE = 1.0 V)
DYNAMIC CHARACTERISTICS
hFE
40
25
VCE(sat)
—
VBE(on)
—
—
400
—
0.7
Vdc
1.2
Vdc
Current Gain Bandwidth Product
(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
fT
50
—
MHz
Cob
—
30
pF
400
TJ = 125°C
200
25°C
–55°C
100
80
60
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 1. DC Current Gain
VCE = 1.0 V
200 300
500
1.0
0.8
0.6
IC = 10 mA
50
mA
100 mA
TJ = 25°C
250 mA 500 mA
0.4
0.2
0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.5 1.0 2.0 5.0 10 20
50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data