BDC01D Datasheet, PDF (1/4 Pages) Motorola, Inc – One Watt Amplifier Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Amplifier Transistor
NPN Silicon
Order this document
by BDC01D/D
BDC01D
COLLECTOR
2
3
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BDC01D
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
100
Vdc
100
Vdc
5.0
Vdc
0.5
Adc
1.0
Watts
8.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
2.5
Watts
20
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
125
°C/W
Thermal Resistance, Junction to Case
R_qJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Voltage
(IC = 10 mA, IB = 0)
Collector Cutoff Current
(VCB = 100 V, IE = 0)
Emitter Cutoff Current
(IC = 0, VEB = 5.0 V)
1
23
CASE 29–05, STYLE 14
TO–92 (TO–226AE)
Symbol
Min
V(BR)CEO 100
ICBO
—
IEBO
—
Max
Unit
—
Vdc
0.1
mAdc
100
nAdc
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1