BCP68T1G Datasheet, PDF(2/4 Page) ON Semiconductor – NPN Silicon Epitaxial Transistor

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BCP68T1G Datasheet, PDF (2/4 Pages) ON Semiconductor – NPN Silicon Epitaxial Transistor

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BCP68T1G, SBCP68T1G

ELECTRICAL CHARACTERISTICS (TA = 25ï°C unless otherwise noted)

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

CollectorâEmitter Breakdown Voltage (IC = 100 mAdc, IE = 0)

CollectorâEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)

EmitterâBase Breakdown Voltage (IE = 10 mAdc, IC = 0)

CollectorâBase Cutoff Current (VCB = 25 Vdc, IE = 0)

EmitterâBase Cutoff Current (VEB = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

V(BR)CES

V(BR)CEO

V(BR)EBO

5.0

ICBO

IEBO

Vdc

mAdc

DC Current Gain

(IC = 5.0 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

hFE

CollectorâEmitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc)

VCE(sat)

BaseâEmitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc)

VBE(on)

DYNAMIC CHARACTERISTICS

375

0.5

Vdc

1.0

Vdc

CurrentâGain â Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc)

MHz

300

200

100

1.0

TYPICAL ELECTRICAL CHARACTERISTICS

300

TJ = 125ï°C

= 25ï°C

= - 55ï°C

VCE = 1.0 V

100

1000

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

200

100

VCE = 10 V

TJ = 25ï°C

f = 30 MHz

3010

100 200

1000

IC, COLLECTOR CURRENT (mA)

Figure 2. Current-Gain-Bandwidth Product

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