BC856BWT1G Datasheet, PDF (2/6 Pages) ON Semiconductor – General Purpose Transistors

BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1
Series
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
BC856, SBC856 Series
V_(BR)CEO
−65
−
(I_C = −10 mA)
BC857, SBC857 Series
−45
−
BC858 Series
−30
−
−
V
−
−
Collector −Emitter Breakdown Voltage
BC856, SBC856 Series
V_(BR)CES
−80
−
(I_C = −10 mA, V_EB = 0)
BC857B, SBC857B Only
−50
−
BC858 Series
−30
−
−
V
−
−
Collector −Base Breakdown Voltage
(I_C = −10 mA)
BC856, SBC856 Series
V_(BR)CBO
−80
−
BC857, SBC857 Series
−50
−
BC858 Series
−30
−
−
V
−
−
Emitter −Base Breakdown Voltage
(I_E = −1.0 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V_(BR)EBO
−5.0
−
−5.0
−
−5.0
−
−
V
−
−
Collector Cutoff Current (V_CB = −30 V)
Collector Cutoff Current (V_CB = −30 V, T_A = 150°C)
ON CHARACTERISTICS
I_CBO
−
−
−15
nA
−
−
−4.0
mA
DC Current Gain
(I_C = −10 mA, V_CE = −5.0 V)
SBC857B BC858B
BC856A, BC585A
BC856B, SBC856B, BC857B,
BC857C
h_FE
−
90
−
−
−
150
−
−
270
−
(I_C = −2.0 mA, V_CE = −5.0 V)
SBC857B, BC858B
BC856A, BC858A
BC856B, SBC856B, BC857B,
BC857C
Collector −Emitter Saturation Voltage
(I_C = −10 mA, I_B = −0.5 mA)
(I_C = −100 mA, I_B = −5.0 mA)
Base −Emitter Saturation Voltage
(I_C = −10 mA, I_B = −0.5 mA)
(I_C = −100 mA, I_B = −5.0 mA)
Base −Emitter On Voltage
(I_C = −2.0 mA, V_CE = −5.0 V)
(I_C = −10 mA, V_CE = −5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I_C = −10 mA, V_CE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(V_CB = −10 V, f = 1.0 MHz)
Noise Figure
(I_C = −0.2 mA, V_CE = −5.0 Vdc, R_S = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
V_CE(sat)
V_BE(sat)
V_BE(on)
f_T
C_ob
NF
125
220
420
−
−
−
−
−0.6
−
100
−
−
180
250
290
475
520
800
V
−
−0.3
−
−0.65
V
−0.7
−
−0.9
−
V
−
−0.75
−
−0.82
−
−
MHz
−
4.5
pF
−
10
dB
http://onsemi.com
2