BC856BWT1G Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Transistors

BC856BWT1,
SBC856BWT1 Series,
BC857BWT1,
SBC857BWT1 Series,
BC858AWT1 Series
General Purpose
Transistors
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Emitter Voltage
V_CEO
V
BC856, SBC856
−65
BC857, SBC857
−45
BC858
−30
Collector-Base Voltage
V_CBO
V
BC856, SBC856
−80
BC857, SBC857
−50
BC858
−30
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_EBO
I_C
−5.0
−100
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) T_A = 25°C
Thermal Resistance,
Junction−to−Ambient
P_D
R_qJA
150
mW
883
°C/W
Junction and Storage Temperature
T_J, T_stg − 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
xx M G
G
1
xx = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
November, 2011 − Rev. 3
Publication Order Number:
BC856BWT1/D