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BC846BM3T5G Datasheet, PDF (2/5 Pages) ON Semiconductor – General Purpose Transistor NPN Silicon
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BC846BM3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
V
65
−
−
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
V(BR)CES
V
80
−
−
Collector −Base Breakdown Voltage
(IC = 10 mA)
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
V(BR)CBO
V
80
−
−
V(BR)EBO
V
6.0
−
−
ICBO
−
−
15
nA
−
−
5.0
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
hFE
−
−
150
−
200
290
450
VCE(sat)
−
−
−
0.25
V
−
0.6
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
−
0.7
−
V
−
0.9
−
Base −Emitter Voltage (IC = 1.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
VBE(on)
550
645
700
mV
580
660
700
−
−
770
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
MHz
100
−
−
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
−
pF
−
4.5
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
dB
−
−
10
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