BC846BM3T5G Datasheet, PDF (1/5 Pages) ON Semiconductor – General Purpose Transistor NPN Silicon

BC846BM3T5G
General Purpose Transistor
NPN Silicon
• Moisture Sensitivity Level: 1
• ESD Rating:
Human Body Model: >4000 V
Machine Model: >400 V
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
65
Vdc
80
Vdc
6.0
Vdc
100
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
P_D
(Note 1)
T_A = 25°C
Derate above 25°C
265
mW
2.1
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
R_qJA
470
°C/W
Total Device Dissipation
Alumina Substrate (Note 2)
T_A = 25°C
Derate above 25°C
P_D
640
mW
5.1
mW/°C
Thermal Resistance,
Junction to Ambient (Note 2)
R_qJA
195
°C/W
Junction and Storage
Temperature Range
T_J, T_stg
−55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
1
BASE
COLLECTOR
3
2
EMITTER
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
2
STYLE 1
1
1B M
1B = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
BC846BM3T5G SOT−723 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
1
September, 2008 − Rev. 1
Publication Order Number:
BC846BM3/D