BC807-25W Datasheet, PDF (2/8 Pages) ON Semiconductor – General Purpose Transistors

BC807−25W, BC807−40W
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −10 mA)
Collector −Emitter Breakdown Voltage
(V_EB = 0, I_C = −10 mA)
Emitter −Base Breakdown Voltage
(I_E = −1.0 mA)
Collector Cutoff Current
(V_CB = −20 V)
(V_CB = −20 V, T_J = 150°C)
ON CHARACTERISTICS
V_(BR)CEO
−45
−
−
V
V_(BR)CES
−50
−
−
V
V_(BR)EBO
−5.0
−
−
V
I_CBO
−
−
−100
nA
−
−
−5.0
mA
DC Current Gain
(I_C = −100 mA, V_CE = −1.0 V)
(I_C = −500 mA, V_CE = −1.0 V)
Collector −Emitter Saturation Voltage
(I_C = −500 mA, I_B = −50 mA)
h_FE
−
BC807−25, SBC807−25
160
−
400
BC807−40, SBC807−40
250
−
600
40
−
−
V_CE(sat)
−
−
−0.7
V
Base −Emitter On Voltage
(I_C = −500 mA, V_CE = −1.0 V)
SMALL−SIGNAL CHARACTERISTICS
V_BE(on)
−
−
−1.2
V
Current −Gain − Bandwidth Product
(I_C = −10 mA, V_CE = −5.0 Vdc, f = 100 MHz)
f_T
100
−
−
MHz
Output Capacitance
(V_CB = −10 V, f = 1.0 MHz)
C_obo
−
10
−
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
BC807−25WT1G
SBC807−25T1G*
BC807−25WT3G
BC807−40WT1G
SBC807−40WT1G*
BC807−40WT3G
Specific Marking
5B
5C
Package
SC−70
(Pb−Free)
SC−70
(Pb−Free)
Shipping^†
3000 / Tape & Reel
10,000 / Tape & Reel
3000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
2