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BC807-25W Datasheet, PDF (1/8 Pages) ON Semiconductor – General Purpose Transistors | |||
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BC807-25W, BC807-40W
General Purpose
Transistors
PNP Silicon
Features
⢠S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECâQ101 Qualified and
PPAP Capable
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
â45
â50
â5.0
â500
V
V
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FRâ 5 Board,
(Note 1) TA = 25°C
Thermal Resistance,
JunctionâtoâAmbient
PD
RqJA
460
mW
272
°C/W
Junction and Storage Temperature
TJ, Tstg â 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FRâ4 Board, 1 oz. Cu, 100 mm2.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SCâ70
CASE 419
STYLE 3
MARKING DIAGRAM
5x M G
G
1
5x = Device Code
x = B or C
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 â Rev. 4
Publication Order Number:
BC807â25W/D
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