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BC327-25G Datasheet, PDF (2/5 Pages) ON Semiconductor – Amplifier Transistors | |||
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BC327, BC327â16, BC327â25, BC327â40
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector âEmitter Breakdown Voltage
(IC = â10 mA, IB = 0)
V(BR)CEO
â45
â
Vdc
â
Collector âEmitter Breakdown Voltage
(IC = â100 mA, IE = 0)
V(BR)CES
â50
â
Vdc
â
Emitter âBase Breakdown Voltage
(IE = â10 mA, IC = 0)
V(BR)EBO
â5.0
â
â
Vdc
Collector Cutoff Current
(VCB = â30 V, IE = 0)
ICBO
nAdc
â
â
â100
Collector Cutoff Current
(VCE = â45 V, VBE = 0)
ICES
nAdc
â
â
â100
Emitter Cutoff Current
(VEB = â4.0 V, IC = 0)
IEBO
â
â
â100 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = â100 mA, VCE = â1.0 V)
(IC = â300 mA, VCE = â1.0 V)
hFE
BC327
BC327â16
BC327â25
BC327â40
â
100
â
630
100
â
250
160
â
400
250
â
630
40
â
â
BaseâEmitter On Voltage
(IC = â300 mA, VCE = â1.0 V)
VBE(on)
â
â
â1.2
Vdc
Collector âEmitter Saturation Voltage
(IC = â500 mA, IB = â50 mA)
VCE(sat)
â
â
â0.7
Vdc
SMALLâSIGNAL CHARACTERISTICS
Output Capacitance
(VCB = â10 V, IE = 0, f = 1.0 MHz)
Cob
â
11
â
pF
Current âGain â Bandwidth Product
(IC = â10 mA, VCE = â5.0 V, f = 100 MHz)
fT
â
260
â
MHz
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
0.03
0.01
0.02
SINGLE PULSE
SINGLE PULSE
0.01
0.001 0.002
0.005 0.01 0.02
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.05 0.1 0.2
0.5 1.0 2.0
t, TIME (SECONDS)
Figure 1. Thermal Response
qJC(t) = (t) qJC
qJC = 100°C/W MAX
qJA(t) = r(t) qJA
qJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) â TC = P(pk) qJC(t)
5.0 10 20
50 100
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