BC327-25G Datasheet, PDF (1/5 Pages) ON Semiconductor – Amplifier Transistors

BC327, BC327-16,
BC327-25, BC327-40
Amplifier Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Power Dissipation @ T_A = 25°C
Derate above T_A = 25°C
Total Power Dissipation @ T_A = 25°C
Derate above T_A = 25°C
Operating and Storage Junction
Temperature Range
Symbol
V_CEO
V_CES
V_EBO
I_C
P_D
Value
−45
−50
−5.0
−800
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
P_D
1.5
W
12
mW/°C
T_J, T_stg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient R_qJA
200
°C/W
Thermal Resistance, Junction−to−Case
R_qJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
BC
xxx
AYWW G
G
BCxxx = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
1
September, 2011 − Rev. 6
Publication Order Number:
BC327/D