 English |
|
|
|
|
|
|
|
| BAV70WT1G Datasheet, PDF (2/5 Pages) ON Semiconductor – Dual Switching Diode Common Cathode | |||
| |||
| ◁ |
BAV70WT1G
ELECTRICAL CHARACTERISTICS (TA = 25ï°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
(I(BR) = 100 mA)
V(BR)
70
--
V
Reverse Voltage Leakage Current (Note 3)
(VR = 70 V)
(VR = 50 V)
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
IR
--
5.0
mA
--
100
nA
VF
mV
--
715
--
855
--
1000
--
1250
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
CD
--
1.5
pF
Reverse Recovery Time
(IF = IR = 10 mA, RL = 100 Ω, IR(REC) = 1.0 mA) (Figure 1)
trr
--
6.0
ns
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 2)
VRF
--
1.75
V
3. For each individual diode while the second diode is unbiased.
http://onsemi.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese