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| BAV70WT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – Dual Switching Diode Common Cathode | |||
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BAV70WT1G
Dual Switching Diode
Common Cathode
Features
ï· These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25ï°C)
Rating
Symbol Max Unit
Reverse Voltage
VR
70
V
Forward Current
IF
200
mA
Peak Forward Surge Current
IFM(surge) 500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommen-
ded Operating Conditions is not implied. Extended exposure to stresses
above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR-- 5 Board
(Note 1)
TA = 25ï°C
Derate above 25ï°C
PD
200
mW
1.6 mW/ï°C
Thermal Resistance,
Junction--to--Ambient
RθJA
625
ï°C/W
Total Device Dissipation
PD
300
mW
Alumina Substrate (Note 2) TA = 25ï°C
Derate above 25ï°C
2.4 mW/ï°C
Thermal Resistance,
Junction--to--Ambient
RθJA
417
ï°C/W
Junction and Storage Temperature
TJ, Tstg -- 55 to
ï°C
+150
1. FR-- 5 = 1.0 ¢ 0.75 ¢ 0.062 in.
2. Alumina = 0.4 ¢ 0.3 ¢ 0.024 in. 99.5% alumina.
http://onsemi.com
3
CATHODE
ANODE
1
2
ANODE
MARKING
DIAGRAM
3
1
2
SOT--323
CASE 419
STYLE 5
3
A4 MG
G
1
2
A4 = Specific Device Code
M = Date Code
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
BAV70WT1G SOT--323 3000 / Tape & Reel
(Pb--Free)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ï£ Semiconductor Components Industries, LLC, 2010
1
October, 2010 -- Rev. 5
Publication Order Number:
BAV70WT1/D
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