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BAS70LT1_07 Datasheet, PDF (2/3 Pages) ON Semiconductor – 70 VOLTS SCHOTTKY BARRIER DIODES
BAS70LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage − (IR = 10 mA)
Total Capacitance − (VR = 0 V, f = 1.0 MHz)
Reverse Leakage
(VR = 50 V)
(VR = 70 V)
Forward Voltage − (IF = 1.0 mA)
Forward Voltage − (IF = 10 mA)
Forward Voltage − (IF = 15 mA)
Symbol
V(BR)R
CT
IR
VF
VF
VF
Min
Max
Unit
70
−
V
−
2.0
pF
mA
−
0.1
−
10
−
410
mV
−
750
mV
−
1.0
V
100
10
1.0
150°C
125 °C
85°C
−40 °C
25°C
0.1
−55 °C
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
100
TA = 150°C
10
125°C
1.0
85°C
0.1
0.01
25°C
0.001
0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current versus Reverse
Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
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