BAS70LT1_07 Datasheet, PDF (1/3 Pages) ON Semiconductor – 70 VOLTS SCHOTTKY BARRIER DIODES

BAS70LT1
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage
• Pb−Free Package is Available
http://onsemi.com
70 VOLTS SCHOTTKY
BARRIER DIODES
3
CATHODE
1
ANODE
MAXIMUM RATINGS (T_J = 150°C unless otherwise noted)
Rating
Symbol
Value
Unit
Forward Current
Reverse Voltage
Forward Power Dissipation
@ T_A = 25°C
Derate above 25°C
I_F
70
mA
V_R
70
V
P_F
225
mW
1.8
mW/°C
Operating Junction and Storage
Temperature Range
T_J, T_stg −55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
1
2
SOT−23
CASE 318
STYLE 8
MARKING DIAGRAM
BE M G
G
1
BE Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
BAS70LT1
BAS70LT1G
Package
SOT−23
SOT−23
(Pb−Free)
Shipping^†
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
1
March, 2007 − Rev. 5
Publication Order Number:
BAS70LT1/D