BAS20HT1_10 Datasheet, PDF (2/3 Pages) ON Semiconductor – High Voltage Switching Diode

BAS20HT1
820 W
+10 V
2.0 k
100 mH ^IF
0.1 mF
50 W Output
Pulse
Generator
D.U.T.
0.1 mF
t_r
t_p
t
10%
90%
50 W Input
Sampling
V_R
Oscilloscope
INPUT SIGNAL
I_F
t_rr
t
i_R(REC) = 3.0 mA
I_R
OUTPUT PULSE
(I_F = I_R = 30 mA; MEASURED
at i_R(REC) = 3.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I_F) of 30 mA.
Notes: 2. Input pulse is adjusted so I_R(peak) is equal to 30 mA.
Notes: 3. t_p » t_rr
Figure 1. Recovery Time Equivalent Test Circuit
1000
100
100
10
1.0
0.1
0
55°C
125°C
150°C
25°C
−40°C
0.2 0.4 0.6 0.8 1.0 1.2
V_F, FORWARD VOLTAGE (V)
Figure 2. Forward Current
10
1.0
0.1
0.01
0.001
1.4
0
150°C
125°C
55°C
25°C
−40°C
50
100
150
200
250
300
V_R, REVERSE VOLTAGE (V)
Figure 3. Leakage Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
f = 1 MHz
IE = 0 A
T_A = 25°C
5.0 10
15
20
25 30 ³⁵
V_R, REVERSE VOLTAGE (V)
Figure 4. Total Capacitance
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