ATP108 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

ATP108
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--40V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--35A
ID=--35A, VGS=--10V
ID=--18A, VGS=--4.5V
VDS=--20V, f=1MHz
See specified Test Circuit.
VDS=--20V, VGS=--10V, ID=--70A
IS=--70A, VGS=0V
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
VDD= --20V
ID= --35A
RL=0.57Ω
D
VOUT
ATP108
P.G
50Ω
S
Ratings
Unit
min
typ
max
--40
V
--1
μA
±10
μA
--1.5
--2.6
V
65
S
8
10.4 mΩ
11.5
16.5 mΩ
3850
pF
560
pF
390
pF
19
ns
340
ns
340
ns
290
ns
79.5
nC
20
nC
15
nC
--1.05
--1.5
V
Ordering Information
Device
ATP108-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1604-2/7