AMIS-42673 Datasheet, PDF (2/11 Pages) AMI SEMICONDUCTOR – High Speed CAN Transceiver

AMIS−42673
Table 1. TECHNICAL CHARACTERISTICS
Symbol
Parameter
V_CANH
V_CANL
V_{o(dif)(bus_dom)}
DC Voltage at Pin CANH
DC Voltage at Pin CANL
Differential Bus Output Voltage in
Dominant State
t_{pd(rec−dom)}
t_{pd(dom−rec)}
C_M−range
Propagation Delay TxD to RxD
Propagation Delay TxD to RxD
Input Common−Mode Range for
Comparator
V_CM−peak
Common−Mode Peak
V_CM−step
Common−Mode Step
1. The parameters V_CM−peak and V_CM−step guarantee low EME.
Condition
0 < V_CC < 5.25 V; No Time Limit
0 < V_CC < 5.25 V; No Time Limit
42.5 W < R_LT < 60 W
Guaranteed Differential Receiver
Threshold and Leakage Current
Figures 7 and 8 (Note 1)
Figures 7 and 8 (Note 1)
V_CC
AMIS−42673
3
Thermal
V_CC
shutdown
Max Max Unit
−45
+45
V
−45
+45
V
1.5
3
V
100
230
ns
100
245
ns
−35
+35
V
−500 500
mV
−150 150
mV
1
TxD
V₃₃ ⁸
Driver
control
’S’
7 _CANH
CANL
6
RxD ⁴
V_REF ⁵
PC20071003.2
COMP
R_i(cm)
V_cc/₂
+
R_i(cm)
2
GND
Figure 1. Block Diagram
Table 2. PIN DESCRIPTION
Pin Name
Description
1
TxD Transmit Data Input; Low Input → Dominant Driver; Internal Pullup Current
2
GND Ground
3
V_CC Supply Voltage
4
RxD Receive Data Output; Dominant Transmitter → Low Output
5
V_REF Reference Voltage Output
6
CANL LOW−Level CAN Bus Line (Low in Dominant Mode)
7
CANH HIGH−Level CAN Bus Line (High in Dominant Mode)
8
V₃₃ 3.3 V Supply for Digital I/O
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2