74HC125 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Quad buffer/line driver; 3-state

74HC125
PIN ASSIGNMENT
OE1 1
A1 2
Y1 3
OE2 4
A2 5
Y2 6
GND 7
14 V_CC
13 OE4
12 A4
11 Y4
10 OE3
9 A3
8 Y3
FUNCTION TABLE
HC125
Inputs Output
A OE Y
HL
H
LL
L
XH
Z
LOGIC DIAGRAM
HC125
Active−Low Output Enables
A1
2
3
Y1
OE1
1
5
A2
6
Y2
OE2
4
9
A3
8 _Y3
OE3
10
12
A4
11
Y4
13
OE4
PIN 14 = V_CC
PIN 7 = GND
ÎÎ_MÎÎ_AXÎÎ_IMUÎÎ_MRÎÎ_ATÎÎ_INGÎÎ_S ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
Parameter
Value
Unit
V_CC DC Supply Voltage (Referenced to GND)
V_in DC Input Voltage (Referenced to GND)
– 0.5 to + 7.0
V
– 0.5 to V_CC + 0.5 V
V_out DC Output Voltage (Referenced to GND)
– 0.5 to V_CC + 0.5 V
I_in
DC Input Current, per Pin
±20
mA
I_out DC Output Current, per Pin
±35
mA
I_CC DC Supply Current, V_CC and GND Pins
±75
mA
P_D Power Dissipation in Still Air
SOIC Package†
500
mW
TSSOP Package†
450
T_stg Storage Temperature
– 65 to + 150
_C
T_L Lead Temperature, 1 mm from Case for 10 Seconds
_C
(SOIC or TSSOP Package)
260
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V_in and
V_out should be constrained to the
range GND v (V_in or V_out) v V_CC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V_CC).
Unused outputs must be left open.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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