3LP01M Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET

3LP01M
Electrical Characteristics at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID= --1mA, VGS=0V
VDS= --30V, VGS=0V
VGS=±8V, VDS=0V
VDS= --10V, ID= --100μA
VDS= --10V, ID= --50mA
ID= --50mA, VGS= --4V
ID= --30mA, VGS= --2.5V
ID= --1mA, VGS= --1.5V
VDS= --10V, f=1MHz
See specified Test Circuit.
VDS= --10V, VGS= --10V, ID= --100mA
IS= --100mA, VGS=0V
Switching Time Test Circuit
0V ^VIN
--4V
VIN
PW=10μs
D.C.≤1%
VDD= --15V
ID= --50mA
RL=300Ω
D
VOUT
G
3LP01M
P.G
50Ω
S
Ratings
Unit
min
typ
max
--30
V
--1
μA
±10
μA
--0.4
--1.4
V
80
110
mS
8
10.4
Ω
11
15.4
Ω
27
54
Ω
7.5
pF
5.7
pF
1.8
pF
24
ns
55
ns
120
ns
130
ns
1.43
nC
0.18
nC
0.25
nC
--0.83
--1.2
V
No.6139-2/6