3LP01M Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET

Ordering number : EN6139D
3LP01M
P-Channel Small Signal MOSFET
–30V, –0.1A, _{10.4Ω, Single MCP}
http://onsemi.com
Features
• _{Low ON-resistance}
• _{High-speed switching}
• _{2.5V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10μs, duty cycle≤1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
--30
V
±10
V
--0.1
A
--0.4
A
0.15
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7023A-010
2.0
0.15
3
3LP01M-TL-E
3LP01M-TL-H
0 to 0.08
1
2
0.65
0.3
1 : Gate
2 : Source
3 : Drain
MCP
Ordering & Package Information
Device
Package
Shipping
3LP01M-TL-E
MCP
SC-70,TO-323
3,000
pcs./reel
3LP01M-TL-H
MCP
SC-70,TO-323
3,000
pcs./reel
memo
Pb-Free
Pb-Free
and
Halogen Free
Packing Type: TL
Marking
LOT No.
XA
TL
LOT No.
Electrical Connection
3
Semiconductor Components Industries, LLC, 2013
June, 2013
1
2
62613 TKIM TC-00002945/71112 TKIM/40908 TIIM TC-00001304/ No.6139-1/6
32406PE MSIM TB-00002153/90100 TSIM TA-2006