2SJ661 Datasheet, PDF (2/9 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device

2SJ661
Continued from preceding page.
Parameter
Channel Temperature
Symbol
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--30V, L=200μH, IAV=--38A (Fig.1)
*2 L≤200μH, single pulse
Conditions
Ratings
Unit
150
°C
--55 to +150
°C
250 mJ
--38
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--19A
ID=--19A, VGS=--10V
ID=--19A, VGS=--4V
VDS=--20V, f=1MHz
See Fig.2
VDS=--30V, VGS=--10V, ID=--38A
IS=--38A, VGS=0V
Ratings
Unit
min
typ
max
--60
V
--1
μA
±10
μA
--1.2
--2.6
V
18
31
S
29.5
39 mΩ
40
56 mΩ
4360
pF
470
pF
335
pF
33
ns
285
ns
295
ns
195
ns
80
nC
15
nC
12
nC
--1.0
--1.2
V
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
0V
--10V
≥50Ω
RG
50Ω
L
2SJ661
VDD
VIN
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
VDD= --30V
ID= --19A
RL=1.58Ω
D
VOUT
2SJ661
P.G
50Ω
S
Ordering Information
Device
2SJ661-1E
2SJ661-DL-1E
Package
TO-262-3L
TO-263-2L
Shipping
50pcs./magazine
800pcs./reel
memo
Pb Free
No.8586-2/9