2SJ661 Datasheet, PDF (1/9 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device

Ordering number : EN8586A
2SJ661
P-Channel Power MOSFET
–60V, –38A, _{39mΩ, TO-262-3L/TO-263-2L}
http://onsemi.com
Features
• _{ON-resistance RDS(on)1=29.5mΩ(typ.)}
• _{4V drive}
• _{Input capacitance Ciss=4360pF (typ.)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--60
V
±20
V
--38
A
--152
A
1.65
W
65
W
Continued on next page.
Package Dimensions unit : mm (typ)
7537-001
Package Dimensions unit : mm (typ)
7535-001
2SJ661-1E
2SJ661-DL-1E
10.0
4.5
8.0
10.0
4.5
8.0
1.3
1.3
4
5.3
5.3
1.47
1.27
0.8
123
2.54
2.54
0.5
1 : Gate
2 : Drain
3 : Source
TO-262-3L
1 23
1.27
0.8
2.54
2.54
0.254
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
TO-263-2L
Product & Package Information
• Package : TO-262-3L
• JEITA, JEDEC : TO-262
• Minimum Packing Quantity : 50pcs./magazine
Marking
• Package : TO-263-2L
• JEITA, JEDEC : SC-83, TO-263
• Minimum Packing Quantity : 800pcs./reel
Packing Type : DL
Electrical Connection
2, 4
J661
LOT No.
1
DL
3
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/N1805QA MSIM TB-00001078 No.8586-1/9