2SJ652-RA11 Datasheet, PDF (2/7 Pages) ON Semiconductor – General-Purpose Switching Device Applications

2SJ652
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--14A
ID=--14A, VGS=--10V
ID=--14A, VGS=--4V
VDS=--20V, f=1MHz
See Fig.2
VDS=--30V, VGS=--10V, ID=--28A
IS=--28A, VGS=0V
Ratings
Unit
min
typ
max
--60
V
--1
μA
±10
μA
--1.2
--2.6
V
18
26
S
28.5
38 mΩ
39
55.5 mΩ
4360
pF
470
pF
335
pF
33
ns
210
ns
310
ns
180
ns
80
nC
15
nC
12
nC
--0.96
--1.2
V
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
0V
--10V
≥50Ω
RG
50Ω
L
2SJ652
VDD
VIN
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
VDD= --30V
ID= --14A
RL=2.1Ω
D
VOUT
2SJ652
P.G
50Ω
S
Ordering Information
Device
2SJ652-1E
Package
TO-220F-3SG
Shipping
50pcs./magazine
memo
Pb Free
No.7625-2/7