2SJ652-RA11 Datasheet, PDF (1/7 Pages) ON Semiconductor – General-Purpose Switching Device Applications

Ordering number : EN7625A
2SJ652
SANYO Semiconductors
DATA SHEET
2SJ652
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)1=28.5mΩ(typ.)}
• _{Input capacitance Ciss=4360pF (typ.)}
• _{4V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--30V, L=500μH, IAV=--28A (Fig.1)
*2 L≤500μH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--60
V
±20
V
--28
A
--112
A
2.0
W
30
W
150
°C
--55 to +150
°C
343 mJ
--28
A
Package Dimensions
unit : mm (typ)
7529-001
10.16
3.18
4.7
2.54
2SJ652-1E
Product & Package Information
• Package
: TO-220F-3SG
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
1.47 MAX
0.8
A
2.76
DETAIL-A
(0.84)
J652
1
LOT No.
3
123
0.5
2.54
2.54
FRAME
EMC
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3SG
http://semicon.sanyo.com/en/network
51612QA TKIM TC-00002759/72503 TSIM TA-4245 No.7625-1/7