2SC5994 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

2SC5994
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3)
Parameter
Symbol
Conditions
Value
min
typ
Unit
max
Collector Cutoff Current
ICBO
VCB=50V, IE=0A
1 μA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
1 μA
DC Current Gain
hFE1
VCE=2V, IC=100mA
200
560
hFE2
VCE=2V,IC=1.5A
40
Gain-Bandwidth Product
fT
VCE=10V, IC=300mA
420
MHz
Output Capacitance
Collector to Emitter Saturation
Voltage
Cob
VCE(sat)
VCB=10V, f=1MHz
IC=1A, IB=50mA
9
pF
135
300 mV
Base to Emitter Saturation Voltage
Collector to Base Breakdown
Voltage
VBE(sat)
V(BR)CBO
IC=1A, IB=50mA
IC=10μA, IE=0A
0.9
1.2 V
100
V
Collector to Emitter Breakdown
V(BR)CES
IC=100μA, RBE=0Ω
100
V
Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter to Base Breakdown Voltage V(BR)EBO
IE=10μA, IC=0A
6
V
Turn-On Time
Storage Time
Fall Time
ton
tstg
See specified Test
Circuit
tf
30
ns
330
ns
40
ns
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
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