2SC5994 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

2SC5994
Bipolar Transistor
50V, 2A, Low VCE(sat), NPN Single
Features
• Adoption of MBIT Process
• Low Collector to Emitter Saturation Voltage
• Large Current Capacity
• High Speed Switching
Typical Applications
• Voltage Regulators
• Relay Drivers
• Lamp Drivers
• Electrical Equipment
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
100
V
Collector to Emitter Voltage
VCES
VCEO
100
V
50
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
2
A
Collector Current (Pulse)
ICP
4
A
Base Current
Collector Dissipation
IB
(Note 2)
Tc=25°C
PC
400 mA
1.3
W
3.5
W
Junction Temperature
Tj
150 °C
Storage Temperature
Tstg
−55 to +150 °C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Note 2 : Surface mounted on ceramic substrate(450mm² × 0.8mm)
www.onsemi.com
ELECTRICAL CONNECTION
2
1 : Base
1
2 : Collector
3 : Emitter
3
MARKING
12 ₃
SOT-89 / PCP-1
123
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
April 2016 - Rev. 2
Publication Order Number :
2SC5994/D