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2SC2712GT1G Datasheet, PDF (2/3 Pages) ON Semiconductor – Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz
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2SC2712GT1G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector−Base Cutoff Current
(VCB = 60 Vdc, IE = 0)
Emitter Cut−off Current (VEB = 5 V, IC = 0 V)
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 1.0 mA, VCE = 10.0 V, f = 10 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.1 mA, VCE = 6.0 Vdc, RS = 10 kW, f = 1.0 kHz, BW = 200 Hz)
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
Symbol
Min
V(BR)CEO
50
V(BR)CBO
60
V(BR)EBO
5.0
ICBO
−
IEBO
−
ICEO
−
−
−
hFE
200
VCE(sat)
−
fT
80
Cobo
−
NF
−
Max
Unit
−
Vdc
−
Vdc
−
Vdc
0.1
mAdc
0.1
mA
0.1
mAdc
2.0
mAdc
1.0
mAdc
−
400
Vdc
0.25
MHz
−
pF
3.5
dB
10
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