2SC2712GT1G Datasheet, PDF (1/3 Pages) ON Semiconductor – Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz

2SC2712GT1G
Medium Frequency
NPN Amplifier Transistor
50 V, 200 mA, 80 MHz
The 2SC2712GT1G is designed for low to medium frequency
applications such as wireless toys. The targeted design enables
improved performance versus the industry standard MMBT3904* in
some key parametric specifications.
Features
• Lower V_CE(sat)*
• Higher Gain (h_fe)*
• Higher Breakdown Voltage Rating*
• Moisture Sensitivity Level: 1
• This is a Pb−Free Device
Benefits
• Longer Battery Life
• Improved Performance Through Targeted Design
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V_(BR)CBO
60
Vdc
Collector−Emitter Voltage
V_(BR)CEO
50
Vdc
Emitter−Base Voltage
V_(BR)EBO
5.0
Vdc
Collector Current − Continuous
I_C
150
mAdc
Collector Current − Peak
I_C(P)
200
mAdc
Base Current
I_B
30
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
Junction Temperature
Storage Temperature
P_D
200
mW
T_J
150
°C
T_stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*Specifications compared to MMBT3904.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
3
2
1
SC−59
CASE 318D
STYLE 1
MARKING DIAGRAMS
SCG M
SCG = Specific Date Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
2SC2712GT1G SC−59
3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
Publication Order Number:
2SC2712GT1/D