2N6344_06 Datasheet, PDF (2/6 Pages) ON Semiconductor – Triacs Silicon Bidirectional Thyristors

2N6344
THERMAL CHARACTERISTICS
Characteristic
†Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Sec
Symbol
R_qJC
T_L
Max
Unit
2.2
°C/W
260
°C
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
†Peak Repetitive Blocking Current
(V_D = Rated V_DRM, V_RRM; Gate Open)
ON CHARACTERISTICS
T_J = 25°C
T_J = 100°C
I_DRM,
I_RRM
−
− 10 mA
−
− 2.0 mA
†Peak On−State Voltage
(I_TM = "11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p2%)
Gate Trigger Current (Continuous dc) (V_D = 12 Vdc, R_L = 100 W)
Quadrant I: MT2(+), G(+)
Quadrant II: MT2(+), G(−)
Quadrant III: MT2(−), G(−)
Quadrant IV: MT2(−), G(+)
†MT2(+), G(+); MT2(−), G(−) T_C = −40°C
†MT2(+), G(−); MT2(−), G(+) T_C = −40°C
Gate Trigger Voltage (Continuous dc) (V_D = 12 Vdc, R_L = 100 W)
Quadrant I: MT2(+), G(+)
Quadrant II: MT2(+), G(−)
Quadrant III: MT2(−), G(−)
Quadrant IV: MT2(−), G(+)
†MT2(+), G(+); MT2(−), G(−) T_C = −40°C
†MT2(+), G(−); MT2(−), G(+) T_C = −40°C
Gate Non−Trigger Voltage (Continuous dc)
(V_D = Rated V_DRM, R_L = 10 k W, T_J = 100°C)
†MT2(+), G(+); MT2(−), G(−); MT2(+), G(−); MT2(−), G(−)
V_TM
I_GT
Both
2N6349 only
Both
2N6349 only
V_GT
Both
2N6349 only
Both
2N6349 only
V_GD
− 1.3 1.55 V
mA
− 12 50
− 12 75
− 20 50
− 35 75
−
− 100
−
− 125
V
− 0.9 2.0
− 0.9 2.5
− 1.1 2.0
− 1.4 2.5
−
− 2.5
−
− 3.0
V
0.2 −
−
†Holding Current (V_D = 12 Vdc, Gate Open)
(Initiating Current = "200 mA)
T_C = 25°C
I_H
*T_C = −40°C
− 6.0 40 mA
−
− 75
†Turn-On Time
(V_D = Rated V_DRM, I_TM = 11 A, I_GT = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms)
t_gt
− 1.5 2.0 ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(V_D = Rated V_DRM, I_TM = 11 A, Commutating di/dt = 4.0 A/ms, Gate Unenergized, T_C = 80°C)
†Indicates JEDEC Registered Data.
dv/dt(c)
− 5.0 − V/ms
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