2N6344_06 Datasheet, PDF (1/6 Pages) ON Semiconductor – Triacs Silicon Bidirectional Thyristors

2N6344
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full−wave silicon gate controlled solid−state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
Features
• Blocking Voltage to 800 V
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in all Four Quadrants
• For 400 Hz Operation, Consult Factory
• Pb−Free Package is Available*
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
†Peak Repetitive Off−State Voltage (Note 1) V_DRM,
V
(T_J = −40 to +110°C, Sine Wave
V_RRM
50 to 60 Hz, Gate Open)
2N6344
600
2N6349
800
†On−State RMS Current (T_C = +80°C) Full I_T(RMS)
8.0
A
Cycle Sine Wave 50 to 60 Hz (T_C = +90°C)
4.0
†Peak Non−Repetitive Surge Current (One
I_TSM
100
A
Full Cycle, Sine Wave 60 Hz, T_C = +25°C)
Preceded and followed by rated current
Circuit Fusing Consideration (t = 8.3 ms)
I²t
40
A²s
†Peak Gate Power
(T_C = +80°C, Pulse Width = 2 ms)
P_GM
20
W
†Average Gate Power
(T_C = +80°C, t = 8.3 ms)
P_G(AV)
0.5
W
†Peak Gate Current
(T_C = +80°C, Pulse Width = 2.0 ms)
I_GM
2.0
A
†Peak Gate Voltage
(T_C = +80°C, Pulse Width = 2.0 ms)
V_GM
10
V
†Operating Junction Temperature Range
T_J −40 to +125 °C
Storage Temperature Range
T_stg −40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†Indicates JEDEC Registered Data.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 4
http://onsemi.com
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
4
1
2
3
TO−220AB
CASE 221A
STYLE 4
2N6344G
AYWW
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
2N6344
Package
TO−220AB
Shipping
500 Units / Box
2N6344G
TO−220AB
(Pb−Free)
500 Units / Box
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N6344/D