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2N5192G Datasheet, PDF (2/6 Pages) ON Semiconductor – Silicon NPN Power Transistors
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2N5190G, 2N5191G, 2N5192G
ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
2N5190G
2N5191G
2N5192G
VCEO(sus)
40
60
80
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
2N5190G
(VCE = 60 Vdc, IB = 0)
2N5191G
(VCE = 80 Vdc, IB = 0)
2N5192G
ICEO
−
−
−
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
2N5190G
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N5191G
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N5192G
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5190G
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5191G
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5192G
ICEX
−
−
−
−
−
−
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
2N5190G
(VCB = 60 Vdc, IE = 0)
2N5191G
(VCB = 80 Vdc, IE = 0)
2N5192G
ICBO
−
−
−
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.5 Adc, VCE = 2.0 Vdc)
2N5190G/2N5191G
2N5192G
(IC = 4.0 Adc, VCE = 2.0 Vdc)
2N5190G/2N5191G
2N5192G
IEBO
−
hFE
25
20
10
7.0
Collector−Emitter Saturation Voltage
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
−
−
Base−Emitter On Voltage
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
−
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
*JEDEC Registered Data.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
fT
2.0
Max
Unit
Vdc
−
−
−
mAdc
1.0
1.0
1.0
mAdc
0.1
0.1
0.1
2.0
2.0
2.0
mAdc
0.1
0.1
0.1
mAdc
1.0
−
100
80
−
−
Vdc
0.6
1.4
Vdc
1.2
MHz
−
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