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2N5192G Datasheet, PDF (1/6 Pages) ON Semiconductor – Silicon NPN Power Transistors | |||
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2N5190G, 2N5191G,
2N5192G
Silicon NPN Power
Transistors
Silicon NPN power transistors are for use in power amplifier and
switching circuits, â excellent safe area limits. Complement to PNP
2N5194, 2N5195.
Features
⢠Epoxy Meets UL 94 Vâ0 @ 0.125 in.
⢠These Devices are PbâFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorâEmitter Voltage
2N5190G
2N5191G
2N5192G
VCEO
Vdc
40
60
80
CollectorâBase Voltage
2N5190G
2N5191G
2N5192G
VCBO
Vdc
40
60
80
EmitterâBase Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEBO
IC
IB
PD
5.0
Vdc
4.0
Adc
1.0
Adc
40
W
320
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg â 65 to + 150
°C
ESD â Human Body Model
HBM
3B
V
ESD â Machine Model
MM
C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Thermal Resistance, JunctionâtoâCase RqJC
3.12
Unit
°C/W
*For additional information on our PbâFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
October, 2013 â Rev. 14
http://onsemi.com
4.0 AMPERES
NPN SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS â 40 WATTS
COLLECTOR
2
3
BASE
1
EMITTER
TOâ225
CASE 77
STYLE 1
123
MARKING DIAGRAM
YWW
2
N519xG
Y
=
WW =
2N519x =
G
=
Year
Work Week
Device Code
x = 0, 1, or 2
PbâFree Package
ORDERING INFORMATION
Device
2N5190G
2N5191G
2N5192G
Package
TOâ225
(PbâFree)
TOâ225
(PbâFree)
TOâ225
(PbâFree)
Shipping
500 Units/Box
500 Units/Box
500 Units/Box
Publication Order Number:
2N5191/D
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