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2N4123_08 Datasheet, PDF (2/6 Pages) ON Semiconductor – General Purpose Transistors
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2N4123, 2N4124
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IE = 0)
V(BR)CEO
Vdc
2N4123
30
−
2N4124
25
−
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Vdc
2N4123
40
−
2N4124
30
−
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)EBO
Vdc
5.0
−
ICBO
nAdc
−
50
IEBO
nAdc
−
50
DC Current Gain (Note 1)
(IC = 2.0 mAdc, VCE = 1.0 Vdc)
hFE
2N4123
2N4124
−
50
150
120
360
(IC = 50 mAdc, VCE = 1.0 Vdc)
Collector−Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base−Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Collector−Base Capacitance
(IE = 0, VCB = 5.0 V, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz)
Current Gain − High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N4123
2N4124
VCE(sat)
VBE(sat)
25
−
60
−
Vdc
−
0.3
Vdc
−
0.95
fT
2N4123
2N4124
Cibo
Ccb
hfe
2N4123
2N4124
|hfe|
2N4123
2N4124
250
−
300
−
−
8.0
−
4.0
50
200
120
480
2.5
−
3.0
−
MHz
pF
pF
−
−
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2N4123
2N4124
NF
2N4123
2N4124
50
200
120
480
dB
−
6.0
−
5.0
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