2N4123_08 Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Transistors

2N4123, 2N4124
General Purpose
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol Value
Unit
V_CEO
Vdc
2N4123
30
2N4124
25
Collector−Base Voltage
V_CBO
Vdc
2N4123
40
2N4124
30
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
V_EBO
I_C
P_D
5.0
Vdc
200
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ T_C = 25°C
P_D
1.5
W
Derate above 25°C
12
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient R_qJA
200
°C/W
Thermal Resistance, Junction−to−Case
R_qJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
412x
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
November, 2008 − Rev. 4
x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
2N4123RLRM TO−92 2000 / Tape & Ammo
2N4124G
TO−92
(Pb−Free)
5000 Units / Bulk
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2N4123/D