1HP04CH Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device

1HP04CH
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
Input Capacitance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
Ciss
ID=−1mA, VGS=0V
VDS=−100V, VGS=0V
VGS=±16V, VDS=0V
VDS=−10V, ID=−100μA
VDS=−10V, ID=−80mA
ID=−80mA, VGS=−10V
ID=−40mA, VGS=−4V
−100
−1.2
170
12.5
14
14
V
−1 μA
±10 μA
−2.6 V
mS
18 Ω
21 Ω
pF
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VDS=−20V, f=1MHz
2.8
pF
0.9
pF
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
td(on)
tr
td(off)
tf
Qg
See specified Test Circuit
21
ns
18
ns
200
ns
81
ns
0.9
nC
Gate to Source Charge
Qgs
VDS=−50V, VGS=−10V, ID=−170mA
0.14
nC
Gate to Drain “Miller” Charge
Qgd
0.27
nC
Forward Diode Voltage
VSD
IS=−170mA, VGS=0V
−0.88
−1.2 V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW≤10μs
D.C.≤1%
G
VDD= --50V
ID= --80mA
RL=612.5Ω
D
VOUT
Rg
1HP04CH
P.G
50Ω
S
Rg=3kΩ
www.onsemi.com
2