1HP04CH Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device

1HP04CH
Small Signal MOSFET
–100V, 18Ω, –170mA, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
• High Voltage (100V)
• 4V drive
• High Speed Switching and Low Loss
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
Typical Applications
• Lithium-ion Battery Charging and Discharging Cell Balance
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
−100
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
−170 mA
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
−680 mA
Power Dissipation
When mounted on ceramic substrate
PD
(900mm² × 0.8mm)
0.6
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm² × 0.8mm)
Symbol
R_θJA
Value
Unit
208 °C/W
www.onsemi.com
VDSS
−100V
RDS(on) Max
18Ω@ −10V
21Ω@ −4V
ID _Max
−170mA
ELECTRICAL CONNECTION
P-Channel
3
1
1 : Gate
2 : Source
3 : Drain
2
PACKING TYPE : TL MARKING
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
October 2015 - Rev. 1
Publication Order Number :
1HP04CH/D