1HN04CH Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
1HN04CH
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit
VDS=50V, VGS=10V, ID=270mA
IS=270mA, VGS=0V
Value
Unit
min
typ
max
10
ns
7.4
ns
58
ns
39
ns
0.9
nC
0.19
nC
0.26
nC
0.88
1.2 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Ordering & Package Information
Device
1HN04CH-TL-W
Package
CPH3, SC-59
SOT-23, TO-236
Shipping
3,000
pcs. / reel
note
Pb-Free
and
Halogen Free
Packing Type:TL
Marking
Electrical Connection
Switching Time Test Circuit
No.A0925-2/5