1HN04CH Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA0925C
1HN04CH
Power MOSFET
100V, 8Ω, 270mA, Single N-Channel
http://onsemi.com
Features
 4V drive
 Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Value
Unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
VDSS
VGSS
ID
IDP
PD
Tj
PW10s, duty cycle1%
When mounted on ceramic substrate (900mm²ï‚´0.8mm)
100
V
20
V
270
mA
1080
mA
0.6
W
150
C
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (900mm²ï‚´0.8mm)
Symbol
R_JA
Value
208
Unit
C/W
Electrical Characteristics at Ta  25C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=100A
VDS=10V, ID=140mA
ID=140mA, VGS=10V
ID=70mA, VGS=4V
VDS=20V, f=1MHz
min
100
1.2
Value
Unit
typ
max
V
1 A
10 A
2.6 V
260
mS
6
8
6.8
9.8 
15
pF
3.1
pF
0.9
pF
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72514HK TC-00003129/52114HK/42814TKIM/90507TIIM PE No.A0925-1/5