STK534U342C-E Datasheet, PDF (1/15 Pages) ON Semiconductor – Intelligent Power Module (IPM)

STK534U342C-E
Intelligent Power Module (IPM)
600 V, 5 A
Overview
This “Inverter IPM” is highly integrated device containing all High Voltage
(HV) control from HV-DC to 3-phase outputs in a single SIP module (Single-In
line Package). Output stage uses IGBT/FRD technology and implements Under
Voltage Protection (UVP). Internal Boost diodes are provided for high side gate
boost drive.
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Function
 Single control power supply due to Internal bootstrap circuit for high side
pre-driver circuit
 All control input and status output are at low voltage levels directly compatible
with microcontrollers.
 Built-in cross conduction prevention.
 Externally accessible embedded thermistor for substrate temperature
measurement
Certification
 UL1557 (File number: E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Symbol
Remarks
Ratings
Supply voltage
VCC
P to U-, V-, W-, surge < 500 V
*1
450
Collector-emitter voltage
VCE
P to U, V, W or U, V, W, to U-, V-, W-
600
P,U-,V-,W-,U,V,W terminal current
±5
Output current
Io
P,U-,V-,W-,U,V,W terminal current, Tc = 100C
±3
Output peak current
Iop
P,U-,V-,W-,U,V,W terminal current, P.W. = 1 ms
±10
Pre-driver voltage
Input signal voltage
FLTEN terminal voltage
VD1,2,3,4
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
*2
VIN
HIN1, 2, 3, LIN1, 2, 3
VFLTEN
FLTEN terminal
20
0.3 to VDD
0.3 to VDD
Maximum power dissipation
Pd
IGBT per 1 channel
27.7
Junction temperature
Tj
IGBT, FRD, Pre-Driver IC
150
Storage temperature
Tstg
40 to +125
Operating case temperature
Tc
IPM case
20 to +100
Tightening torque
A screw part
*3
0.9
Withstand voltage
Vis
50 Hz sine wave AC 1 minute *4
2000
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1: Surge voltage developed by the switching operation due to the wiring inductance between P and U-(V-, W-) terminal.
*2: Terminal voltage: VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS.
*3: Flatness of the heat-sink should be 0.15 mm and below.
*4: Test conditions : AC 2500 V, 1 s.
Unit
V
V
A
A
A
V
V
V
W
C
C
C
Nm
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
September 2016 - Rev. 1
Publication Order Number :
STK534U342C-E/D