RB521S30T1 Datasheet, PDF (1/4 Pages) ON Semiconductor – Schottky Barrier Diode

RB521S30T1
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Extremely Low Forward Voltage 0.5 V (max) @ I_F = 200 mA
• Low Reverse Current
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
V_R
Forward Current DC
I_F
ESD Rating: Class 1C per Human Body Model
ESD Rating: Class C per Machine Model
30
Vdc
200
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P_D
200
mW
(Note 1) T_A = 25°C
Derate above 25°C
1.57
mW/°C
Thermal Resistance Junction−to−Ambient
Junction and Storage
Temperature Range
R_qJA
T_J, T_stg
635
−55 to +125
°C/W
°C
1. FR−5 Minimum Pad
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Leakage
(V_R = 10 V)
I_R
− − 30.0 mA
Forward Voltage
(I_F = 200 mA)
V_F
− − 0.50 Vdc
http://onsemi.com
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
1
2
SOD−523
CASE 502
PLASTIC
MARKING DIAGRAM
5M^d
5M = Specific Device Code
d = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
RB521S30T1
RB521S30T5
SOD−523
SOD−523
4 mm Pitch
3000/Tape & Reel
2 mm Pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
1
November, 2003 − Rev. 2
Publication Order Number:
RB521S30T1/D